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| TSC5304D High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 1.5V @ IC / IB = 4A / 1A Features Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. Low Base Drive Requirement Suitable for Half Bridge Light Ballast Application Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. TSC5304DCP RO TSC5304DCH C5 Package TO-252 TO-251 Packing 2.5Kpcs / 13" Reel 75pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage @ VBE=0V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Power Total Dissipation @ Tc=25C Maximum Operating Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICM IB IBM PDTOT TJ TSTG Limit 700 700 400 9 4 8 2 4 35 +150 -55 to +150 Unit V V V V A A A A W o o C C 1/6 Version: C08 TSC5304D High Voltage NPN Transistor with Diode Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RJC RJA Limit 3.57 68 Unit o o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCB =700V, IE =0 VCE =400V, IB =0 VEB =7V, IC =0 IC =0.5A, IB =0.1A Collector-Emitter Saturation Voltage IC =1A, IB =0.2A IC =2.5A, IB =0.5A IC =4A, IB =1A Base-Emitter Saturation Voltage IC =1A, IB =0.2A IC =2A, IB =0.5A VCE =5V, IC =10mA DC Current Gain Forward Voltage Drop Turn On Time Storage Time VCE =5V, IC =1A VCE =5V, IC =2A IF =2A VCC =250V, IC =1A, IB1=IB2=0.2A, tp=25uS Vf tON tSTG tf Hfe BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VCE(SAT)4 VBE(SAT)1 VBE(SAT)2 700 400 9 ---------10 17 12 ----------0.25 0.5 1.2 0.5 ------0.2 3.0 0.2 ---100 250 10 0.7 1 1.5 -1.1 1.2 -27 32 2 0.6 4.5 0.3 V uS uS uS V V V V V uA uA uA Conditions Symbol Min Typ Max Unit Duty Cycle<1% Fall Time Notes: Pulsed duration =380uS, duty cycle 2% 2/6 Version: C08 TSC5304D High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: C08 TSC5304D High Voltage NPN Transistor with Diode SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.814 0.889 0.032 0.035 0.814 0.889 0.032 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.094 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/6 Version: C08 TSC5304D High Voltage NPN Transistor with Diode SOT-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.190 2.380 0.0862 0.0937 0.890 1.140 0.0350 0.0449 0.640 0.890 0.0252 0.0350 0.760 1.140 0.0299 0.0449 5.210 5.460 0.2051 0.2150 0.460 0.580 0.0181 0.0228 0.460 0.580 0.0181 0.0228 5.970 6.100 0.2350 0.2402 6.350 6.730 0.2500 0.2650 2.280 BSC 0.0898 BSC 8.890 9.650 0.3500 0.3799 1.910 2.280 0.0752 0.0898 0.890 1.270 0.0350 0.0500 1.150 1.520 0.0453 0.0598 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: C08 TSC5304D High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: C08 |
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